HJT (Heterojunction Technology) cells employ a sophisticated architecture combining crystalline silicon wafers with hydrogenated amorphous silicon (a-Si:H) thin films. The core structure involves sequential deposition of intrinsic amorphous silicon (i-a-Si:H) and doped amorphous silicon layers (p/n-a-Si:H) on both sides of N-type crystalline silicon substrates, forming high-quality heterojunction interfaces.
Our HJT automation solution ensures precise handling and seamless integration across all key production stages:
CHONTON provides comprehensive global support to ensure smooth project implementation and long-term operation:
